Highest Resolution Electrical Measurements

Doping Level Measurements from Intrinsic Silicon to 1E20 atoms/cm3 Demonstrated

In PrimeNano's latest white paper, we demonstrated the superior sensitivity of sMIM in differentiating the samples' permittivity and conductivity between dopant levels.

In this study, phosphorus was the species used which is an n-type dopant in silicon. Not only did we demonstrated the absolute sensitivity of sMIM's permittivity and conductivity measurements in all concentration levels, but also its outstanding performance in low doped silicon (well below 1E15 a/cm3 levels). An additional advantage of sMIM is that there are no limitations due to species and matrix interactions so any type of dopant can be imaged at the same level of sensitivity.

To read the complete white paper, click the Read the White Paper button.