SCANWAVE PRO™ SOLUTIONS - Automated Quantified Dopant Measurements

APPLICATION EXAMPLES

1. Quantified Image of Doped Epitaxial Silicon

The unprecedented lateral resolution combined with the industry’s highest sensitivity provide detailed dopant maps and depth profiles. Show in Figure 1 is the dopant concentration map and depth profile of two face-to-face assembled epitaxially grown and doped silicon samples. The false color map represents dopant levels with nanoscale positional precision. The dopant type (n or p) is determined, and color coded in the map below.  Operations on the false color map such as line cross sections (also shown below), point readout and more are standard in this system. This map is automatically generated by the ScanWave ProTM Solutions system.

2. Industry’s Highest Sensitivity to Dopant Levels

ScanWave ProTM Solutions achieves sensitivity to low dopant levels never before possible without very expensive, complicated and destructive techniques such as SIMS. The log-linear response of ScanWave to dopant concentration (Figure 2) facilitates accurate and repeatable quantification of results for any level of dopant used in chip production today.

3. High Repeatability Measurements

Dynamic repeatability was measured using a reference standard and found to be better than 1/10 of a decade of concentration (Figure 3) for each of the dopant levels in the sample (1E15 to 1E20 a/cm3). The ScanWave ProTM Solutions temperature control unit achieves stable temperature in the enclosure of 0.1 °C/hr guaranteeing ultimate repeatability. Failure analysis and process monitoring using ScanWave ProTM Solutions is now fast, repeatable, and easy to perform.

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